Investigation of degradation mechanism in algan gan hemts

Abstract

With the advancement of technology and autonomous systems such as electric vehicles high electron mobility transistor HEMT have gained prominence in the present era However the reliability of HEMTs depends on many factors viz electric field electron temperature self heating and converse piezoelectric effect leakage current In this thesis various techniques for the mitigation of electric field are proposed Electric field is primarily responsible for the degradation of a device as i...