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http://hdl.handle.net/10603/420154
Title: | Simulation and modelling of TFET based Biosensors for Label free Detection of Biomolecules |
Researcher: | Nagendra Reddy, Nelaturi |
Guide(s): | Panda, Deepak Kumar |
Keywords: | Ambipolar Conduction band to Band Tunneling Biosensor |
University: | Vellore Institute of Technology (VIT-AP) |
Completed Date: | 2022 |
Abstract: | The vital widespread application of biosensors in different clinical and non-clinical domains leads to more research interest in designing and developing next-generation biosensors that can deliver fast detection results with simple operation compared to conventional laboratory-based detection methods. Among various biosensors, the FET based biosensors have become popular with it simple operation, portable size, compatibility with standard CMOS technology and label-free detection of target biomolecules.The TFET device becomes the potential candidate for designing the next-generation biosensor with its band-to-band tunneling(BTBT) of charge carriers and superior subthreshold swing characteristics. This work has been designed to investigate the methods to enhance the sensitivity of the TFET biosensor for label-free detection of target biomolecule. Comprehensive review work is carried out on the available literature newlineon the TFET based biosensor by thoroughly investigating the detection methods and newlinephysical design approaches to provide information about TFET biosensors at a single newlinepoint for the upcoming researchers. The gate-work function engineering approach is newlineapplied to the ambipolar conduction based TFET biosensor using the gate overlappedon- newlinedrain approach. The ambipolar conduction based TFET biosensor made the undesirable newlineconductivity of the TFET device into an advantage by measuring the sensitivity. newlineThe dual-material gate(DMG) with a higher metal work function over the overlappeddrain newlineregion increase the tunneling width at the drain-channel junction to reduce the newlineambipolar current of the TFET device. This approach increases the device s sensitivity newlineby ten times more than a single material gate TFET biosensor. The performance investigation newlineof the DMG-TFET biosensor is carried out by taking account of the practical binding difficulties of target biomolecules inside the cavity region, which is neglected newlinein the earlier work. A new novel Z shaped gate TFET biosensor with the extended newlinehorizontal pocket in the sourc |
Pagination: | xix,163 |
URI: | http://hdl.handle.net/10603/420154 |
Appears in Departments: | Department of Electronics Engineering |
Files in This Item:
File | Description | Size | Format | |
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01_ title.pdf | Attached File | 159.78 kB | Adobe PDF | View/Open |
04_content.pdf | 60.62 kB | Adobe PDF | View/Open | |
04_list of tabels.pdf | 44.99 kB | Adobe PDF | View/Open | |
06_ list of figures.pdf | 200.54 kB | Adobe PDF | View/Open | |
07_ acknowledgement.pdf | 43.74 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 47.32 kB | Adobe PDF | View/Open | |
abstract.pdf | 64.3 kB | Adobe PDF | View/Open | |
chapter 1.pdf | 1.82 MB | Adobe PDF | View/Open | |
chapter 2.pdf | 3.55 MB | Adobe PDF | View/Open | |
chapter 3.pdf | 620.1 kB | Adobe PDF | View/Open | |
chapter 4.pdf | 604.56 kB | Adobe PDF | View/Open | |
chapter 5.pdf | 822.69 kB | Adobe PDF | View/Open | |
list of publications.pdf | 63.35 kB | Adobe PDF | View/Open | |
references.pdf | 98.21 kB | Adobe PDF | View/Open | |
signed copy and decleration.pdf | 62.66 kB | Adobe PDF | View/Open |
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