Shodhganga : a reservoir of Indian theses @ INFLIBNET
The Shodhganga@INFLIBNET Centre provides a platform for research students to deposit their Ph.D. theses and make it available to the entire scholarly community in open access.
Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/420089
| Title: | A study of the change in the electrical properties of semiconductors after radiation damage |
| Researcher: | SANGEETA LAL |
| Guide(s): | RAM ASHISH SINGH |
| Keywords: | Physical Sciences Physics Physics Applied |
| University: | Babasaheb Bhimrao Ambedkar Bihar University |
| Completed Date: | 1994 |
| Abstract: | newline |
| Pagination: | |
| URI: | http://hdl.handle.net/10603/420089 |
| Appears in Departments: | SCIENCE |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 01_title_2.pdf | Attached File | 196.52 kB | Adobe PDF | View/Open |
| 02_certificate.pdf | 114.82 kB | Adobe PDF | View/Open | |
| 03_contents.pdf | 241.54 kB | Adobe PDF | View/Open | |
| 05_chapter_1.pdf | 2.45 MB | Adobe PDF | View/Open | |
| 05_chapter_2.pdf | 8.83 MB | Adobe PDF | View/Open | |
| 05_chapter_3.pdf | 2.89 MB | Adobe PDF | View/Open | |
| 05_chapter_4(conclusion).pdf | 7.66 MB | Adobe PDF | View/Open | |
| 11_acknowledgement.pdf | 143.37 kB | Adobe PDF | View/Open | |
| 80_recommendation.pdf | 7.66 MB | Adobe PDF | View/Open | |
| 8_biblography.pdf | 1.54 MB | Adobe PDF | View/Open |
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