Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/410674
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dc.date.accessioned2022-10-07T10:27:49Z-
dc.date.available2022-10-07T10:27:49Z-
dc.identifier.urihttp://hdl.handle.net/10603/410674-
dc.description.abstractThe semiconductor industry s urge towards faster, smaller and cheaper newlineintegrated circuits has lead the industry to smaller node devices. The integrated circuits that are now under volume production belong to 22 nm newlineand 14 nm technology nodes. In 2007 the 45 nm technology came with newlinethe revolutionary high-and#954;/metal gate structure. 22 nm technology utilizes newlinefully depleted tri-gate transistor structure. The 14 nm technology is a newlinecontinuation of the 22 nm technology. Intel is using second generation newlinetri-gate technology in 14 nm devices. After 14 nm, the semiconductor industry is expected to continue the scaling with 10 nm devices followed by newline7 nm. Recently, IBM has announced successful production of 7 nm node newlinetest chips. This is the fashion how nanoelectronics industry is proceeding newlinewith its scaling trend. newlineFor the present node of technologies selective deposition and selective removal of the materials are required. Atomic layer deposition and the newlineatomic layer etching are the respective techniques used for selective deposition and selective removal. Atomic layer deposition still remains as newlinea futuristic manufacturing approach that deposits materials and films in newlineexact places. In addition to the nano/microelectronics industry, ALD is newlinealso widening its application areas and acceptance. The usage of ALD newlineequipments in industry exhibits a diversification trend. With this trend, newlinelarge area, batch processing, particle ALD and plasma enhanced like ALD newlineequipments are becoming prominent in industrial applications. In this newlinework, the development of an atomic layer deposition tool with microwave newlineplasma capability is described, which is affordable even for lightly funded newlineresearch labs. newlineThe report starts with a brief introduction about the atomic layer deposition tool and its operational procedure. The importance of ALD in newlinedepositing high-and#954; dielectric thin films and the microelectronics scenariowith the role of high-and#954; materials is also briefed. newline
dc.format.extent208
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleMicrowave plasma assisted ALD development for the deposition of gate oxides and ALD of high k dielectrics
dc.title.alternative
dc.creator.researcherSubin Thomas
dc.subject.keywordAtomic layer deposition
dc.subject.keywordEngineering and Technology
dc.subject.keywordInstruments and Instrumentation
dc.subject.keywordMicrowave plasma assisted ALD
dc.description.note
dc.contributor.guideK Rajeev Kumar
dc.publisher.placeCochin
dc.publisher.universityCochin University of Science and Technology
dc.publisher.institutionDepartment of Instrumentation
dc.date.registered2010
dc.date.completed2015
dc.date.awarded2015
dc.format.dimensions
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Instrumentation

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01_title.pdfAttached File59.4 kBAdobe PDFView/Open
02_declaration.pdf98.83 kBAdobe PDFView/Open
03_certificate.pdf100.42 kBAdobe PDFView/Open
04_acknowledgement.pdf51.45 kBAdobe PDFView/Open
05_content.pdf119.16 kBAdobe PDFView/Open
07_abstract.pdf81.66 kBAdobe PDFView/Open
08_chapter1.pdf1.39 MBAdobe PDFView/Open
09_chapter2.pdf13.28 MBAdobe PDFView/Open
10_chapter3.pdf3.78 MBAdobe PDFView/Open
11_chapter4.pdf2.73 MBAdobe PDFView/Open
12_chapter5.pdf659.74 kBAdobe PDFView/Open
13_chapter6.pdf123.1 kBAdobe PDFView/Open
14_reference.pdf227.85 kBAdobe PDFView/Open
80_recommendation.pdf137.09 kBAdobe PDFView/Open


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