1. Shodhganga@INFLIBNET
  2. Tata Institute of Fundamental Research
  3. Department of Condensed Matter Physics and Material Sciences (DCMPMS)
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/408958
Title: MOVPE Growth and Characterization of InN and InN GaN Heterostructures
Researcher: Abdul Kadir
Guide(s): Arnab Bhattacharya
Keywords: Physical Sciences
Physics
Physics Condensed Matter
University: Tata Institute of Fundamental Research
Completed Date: 2009
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/408958
Appears in Departments:Department of Condensed Matter Physics and Material Sciences (DCMPMS)

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01_title.pdfAttached File21.23 kBAdobe PDFView/Open
02_declaration.pdf25.53 kBAdobe PDFView/Open
04_acknowledgement.pdf39.62 kBAdobe PDFView/Open
05_contents.pdf36.6 kBAdobe PDFView/Open
08_chapter 1.pdf64.18 kBAdobe PDFView/Open
09_chapter 2.pdf204 kBAdobe PDFView/Open
10_chapter 3.pdf423.42 kBAdobe PDFView/Open
11_chapter 4.pdf722.4 kBAdobe PDFView/Open
12_chapter 5.pdf607.05 kBAdobe PDFView/Open
13_chapter 6.pdf396.55 kBAdobe PDFView/Open
14_chapter 7.pdf192.21 kBAdobe PDFView/Open
15_chapter 8.pdf318.86 kBAdobe PDFView/Open
16_chapter 9.pdf700.04 kBAdobe PDFView/Open
17_chapter 10.pdf1.05 MBAdobe PDFView/Open
18_summary.pdf39.75 kBAdobe PDFView/Open
19_synopsis.pdf744.79 kBAdobe PDFView/Open
20_publications.pdf51.37 kBAdobe PDFView/Open
21_presentations at international conferences.pdf54.6 kBAdobe PDFView/Open
22_list of abbreviations.pdf24.54 kBAdobe PDFView/Open
23_appendices.pdf129.44 kBAdobe PDFView/Open
80_recommendation.pdf212.48 kBAdobe PDFView/Open
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