Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/401402
Title: Modeling and Simulation of Off State Breakdown and Reverse Gate Leakage of AlGaN GaN HEMTs on SiC Substrates
Researcher: BHAVANA PRASANNANJANEYULU
Guide(s): Karmalkar, S
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Technology Madras
Completed Date: 2021
Abstract: newlineAVAILABLE
Pagination: xvi , 95p
URI: http://hdl.handle.net/10603/401402
Appears in Departments:Electrical Engineering

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01_title.pdfAttached File26.15 kBAdobe PDFView/Open
03_certificate.pdf69.58 kBAdobe PDFView/Open
04_acknowledgement.pdf99.81 kBAdobe PDFView/Open
05_content.pdf76.45 kBAdobe PDFView/Open
06_list of graph and table.pdf226.83 kBAdobe PDFView/Open
07_abstract.pdf179.4 kBAdobe PDFView/Open
08_chapter 1.pdf536.15 kBAdobe PDFView/Open
09_chapter 2.pdf1.78 MBAdobe PDFView/Open
10_chapter 3.pdf1.21 MBAdobe PDFView/Open
11_chapter 4.pdf1.79 MBAdobe PDFView/Open
12_chapter 5.pdf2.33 MBAdobe PDFView/Open
13_chapter 6.pdf221.75 kBAdobe PDFView/Open
14_list of publication from thesis.pdf104.82 kBAdobe PDFView/Open
15_cv.pdf117.65 kBAdobe PDFView/Open
16_dc.pdf6.25 kBAdobe PDFView/Open
80_recommendation.pdf246.77 kBAdobe PDFView/Open
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