Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/401402
Title: | Modeling and Simulation of Off State Breakdown and Reverse Gate Leakage of AlGaN GaN HEMTs on SiC Substrates |
Researcher: | BHAVANA PRASANNANJANEYULU |
Guide(s): | Karmalkar, S |
Keywords: | Engineering Engineering and Technology Engineering Electrical and Electronic |
University: | Indian Institute of Technology Madras |
Completed Date: | 2021 |
Abstract: | newlineAVAILABLE |
Pagination: | xvi , 95p |
URI: | http://hdl.handle.net/10603/401402 |
Appears in Departments: | Electrical Engineering |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 26.15 kB | Adobe PDF | View/Open |
03_certificate.pdf | 69.58 kB | Adobe PDF | View/Open | |
04_acknowledgement.pdf | 99.81 kB | Adobe PDF | View/Open | |
05_content.pdf | 76.45 kB | Adobe PDF | View/Open | |
06_list of graph and table.pdf | 226.83 kB | Adobe PDF | View/Open | |
07_abstract.pdf | 179.4 kB | Adobe PDF | View/Open | |
08_chapter 1.pdf | 536.15 kB | Adobe PDF | View/Open | |
09_chapter 2.pdf | 1.78 MB | Adobe PDF | View/Open | |
10_chapter 3.pdf | 1.21 MB | Adobe PDF | View/Open | |
11_chapter 4.pdf | 1.79 MB | Adobe PDF | View/Open | |
12_chapter 5.pdf | 2.33 MB | Adobe PDF | View/Open | |
13_chapter 6.pdf | 221.75 kB | Adobe PDF | View/Open | |
14_list of publication from thesis.pdf | 104.82 kB | Adobe PDF | View/Open | |
15_cv.pdf | 117.65 kB | Adobe PDF | View/Open | |
16_dc.pdf | 6.25 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 246.77 kB | Adobe PDF | View/Open |
Items in Shodhganga are licensed under Creative Commons Licence Attribution-NonCommercial-ShareAlike 4.0 International (CC BY-NC-SA 4.0).
Altmetric Badge: