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http://hdl.handle.net/10603/400951
Title: | Design of compact low noise amplifier using active inductors for narrow band wireless applications |
Researcher: | Prameela B |
Guide(s): | Asha Elizabeth Daniel |
Keywords: | Active inductors Complementary Metal Oxide Semiconductor Engineering and Technology Engineering Electrical and Electronic Low Noise Amplifier Noise Figure Transconductance |
University: | Cochin University of Science and Technology |
Completed Date: | 2022 |
Abstract: | There is an appreciable development in the Radio Frequency Integrated Circuit (RFIC) newlineresearch as the integration of the transceivers to a single technology provides newlinecost-benefit. One of the focuses of the Radio Frequency (RF) industry and researches newlineis on the narrow-band receiver design because of its application in Industrial, Scientific newlineand Medical (ISM) band and Internet of Things (IoT) solutions. In RF designs, chip newlinearea should be given much importance because reducing the chip area can reduce the newlinefabrication cost. newlineThe first stage of an RF receiver is a Low Noise Amplifier (LNA) which determines newlinethe overall noise of the entire receiver chain. The main challenge in the design of an newlineLNA is the trade-off between Noise Figure (NF), gain, linearity, power consumption, newlineand impedance matching. The area of the LNA is also a concern due to the presence of newlinelarge passive on-chip inductors. The cost of the receiver can be reduced if the chip area newlineof the LNA is reduced. newlineThe thesis proposes a low-cost narrow-band Complementary Metal Oxide newlineSemiconductor (CMOS) LNA design with a competitive Figure of Merit (FOM) in newlineterms of gain, NF, impedance matching, power consumption, and area. Three Active newlineInductor (AI) designs and four AI-based LNA designs were analyzed. The modified newlinecascode topology in the LNA design helped to improve the NF and gain. The passivedrain inductor in the designs was replaced with AI so that the area and hence cost is newlinereduced. The bias voltage of the AI was used to tune the LNA parameters. The newlinepost-layout analysis of the designs were done in Cadence Virtuoso using United newlineMicroelectronics Corporation (UMC) 180nm 1P6M CMOS technology, at a supply newlinevoltage of 1.8 V. Out of the designed LNAs, the resistive feedback AI-based LNA has newlinebetter FOM compared to other state-of-the-art LNAs. The analysis of the proposed newlineLNA shows promising results for 2.4 GHz ISM band wireless applications. newline |
Pagination: | 250 |
URI: | http://hdl.handle.net/10603/400951 |
Appears in Departments: | School of Engineering |
Files in This Item:
File | Description | Size | Format | |
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01_title.pdf | Attached File | 156.45 kB | Adobe PDF | View/Open |
02_declaration.pdf | 44.42 kB | Adobe PDF | View/Open | |
03_certificate.pdf | 44.64 kB | Adobe PDF | View/Open | |
04_acknowledgement.pdf | 46.5 kB | Adobe PDF | View/Open | |
05_content.pdf | 69.2 kB | Adobe PDF | View/Open | |
06_list of graph and table.pdf | 135.52 kB | Adobe PDF | View/Open | |
07_abstract.pdf | 47.72 kB | Adobe PDF | View/Open | |
08_chapter1.pdf | 323.44 kB | Adobe PDF | View/Open | |
09_chapter2.pdf | 446.07 kB | Adobe PDF | View/Open | |
10_chapter3.pdf | 1.05 MB | Adobe PDF | View/Open | |
11_chapter4.pdf | 1.69 MB | Adobe PDF | View/Open | |
12_chapter5.pdf | 4.4 MB | Adobe PDF | View/Open | |
13_chapter6.pdf | 187.18 kB | Adobe PDF | View/Open | |
14_appendix.pdf | 840.23 kB | Adobe PDF | View/Open | |
15_reference.pdf | 165.92 kB | Adobe PDF | View/Open | |
80_recommendation.pdf | 303.89 kB | Adobe PDF | View/Open |
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