Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/398469
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dc.coverage.spatial
dc.date.accessioned2022-08-16T06:15:09Z-
dc.date.available2022-08-16T06:15:09Z-
dc.identifier.urihttp://hdl.handle.net/10603/398469-
dc.description.abstractnewline
dc.format.extentAll Pages
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleOptimization of gate dielectrics and process parameters for organic field effect transistors with enhanced performance
dc.title.alternativeOptimization of gate dielectrics and process parameters for organic field-effect transistors with enhanced performance
dc.creator.researcherRajeev V. R.
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Applied
dc.description.note
dc.contributor.guideNarayanan Unni K.N.
dc.publisher.placeGhaziabad
dc.publisher.universityAcademy of Scientific and Innovative Research (AcSIR)
dc.publisher.institutionPhysical Sciences (CSIR-NIIST)
dc.date.registered2014
dc.date.completed2022
dc.date.awarded2022
dc.format.dimensions
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Physical Sciences (CSIR-NIIST)

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01_title.pdfAttached File248.61 kBAdobe PDFView/Open
02_declaration.pdf2.38 MBAdobe PDFView/Open
03_certificate.pdf2.72 MBAdobe PDFView/Open
04_acknowledgement.pdf10.2 kBAdobe PDFView/Open
05_contents.pdf464.36 kBAdobe PDFView/Open
06_list of tables and graph.pdf427.26 kBAdobe PDFView/Open
07_abstract.pdf130.83 kBAdobe PDFView/Open
08_chapter1.pdf1.26 MBAdobe PDFView/Open
09_chapter2.pdf1.87 MBAdobe PDFView/Open
10_chapter3.pdf1.46 MBAdobe PDFView/Open
11_chapter4.pdf2.4 MBAdobe PDFView/Open
12_publications.pdf5.32 MBAdobe PDFView/Open
80_recommendation.pdf256.17 kBAdobe PDFView/Open


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