Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/398469
Title: Optimization of gate dielectrics and process parameters for organic field effect transistors with enhanced performance
Researcher: Rajeev V. R.
Guide(s): Narayanan Unni K.N.
Keywords: Physical Sciences
Physics
Physics Applied
University: Academy of Scientific and Innovative Research (AcSIR)
Completed Date: 2022
Abstract: newline
Pagination: All Pages
URI: http://hdl.handle.net/10603/398469
Appears in Departments:Physical Sciences (CSIR-NIIST)

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01_title.pdfAttached File248.61 kBAdobe PDFView/Open
02_declaration.pdf2.38 MBAdobe PDFView/Open
03_certificate.pdf2.72 MBAdobe PDFView/Open
04_acknowledgement.pdf10.2 kBAdobe PDFView/Open
05_contents.pdf464.36 kBAdobe PDFView/Open
06_list of tables and graph.pdf427.26 kBAdobe PDFView/Open
07_abstract.pdf130.83 kBAdobe PDFView/Open
08_chapter1.pdf1.26 MBAdobe PDFView/Open
09_chapter2.pdf1.87 MBAdobe PDFView/Open
10_chapter3.pdf1.46 MBAdobe PDFView/Open
11_chapter4.pdf2.4 MBAdobe PDFView/Open
12_publications.pdf5.32 MBAdobe PDFView/Open
80_recommendation.pdf256.17 kBAdobe PDFView/Open
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