Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/38300
Title: Synthesis and characterization of Yttria stabilized zirconia and Zirconium tin titanate
Researcher: Ganesh babu P
Guide(s): Manohar P
Keywords: 8 mol Yttria Stabilized Zirconia
Nanoindentation
Zirconium Tin Titanate
Upload Date: 31-Mar-2015
University: Anna University
Completed Date: 01/10/2014
Abstract: In general nanoindentation was performed only for thin films and newlineCrystals The nanoindentation studies of the microwave sintered yttria newlinestabilized zirconia bulk sample has not been reported by previous newlineinvestigators This is an attempt to study the nano mechanical properties, newlinesuch as nanohardness and elastic modulus and one of the important newlinetribological property the coefficient of friction of the microwave sintered newline8 mol Yttria Stabilized Zirconia 8YSZ sample Nanocrystalline ceramic newlinematerials are characterized by distinctive electrical properties that are newlinedifferent from those of micro crystalline samples Generally the surface newlineatom of the nanomaterial will have a higher diffusion coefficient than that of newlinethe bulk ceramic material In the nano 8YSZ sample the electrical transport is newlinedominated by the grain boundary effect so that many inconsistent electrical newlineconductivity results are obtained The main reason for the poor electrical newlineconductivity is the densification of the sample If the conventional sintering newlinemethod is used a higher temperature produces more grain growth in the newlinemicrostructure and the sample will lose its nano properties hence we have to newlinefind alternative sintering methods So the microwave sintering technique is newlinepreferred to enhance the electrical conductivity The total conductivity is newlinedetermined from the Arrhenius representation The activation energy can be newlineobtained from the slope of the fitted line Recently great attention has been newlinepaid to Zirconium Tin Titanate ZST for its low dielectric loss and high newlinedielectric constant high quality factor an almost zero temperature coefficient newlineand strong temperature stability leading to its specific applications in devices newline newline
Pagination: xxii, 159p.
URI: http://hdl.handle.net/10603/38300
Appears in Departments:Faculty of Science and Humanities

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04_acknowledgement.pdf461.3 kBAdobe PDFView/Open
05_content.pdf61.78 kBAdobe PDFView/Open
06_chapter1.pdf731.98 kBAdobe PDFView/Open
07_chapter2.pdf1.23 MBAdobe PDFView/Open
08_cahpter3.pdf272.95 kBAdobe PDFView/Open
09_chapter4.pdf522.92 kBAdobe PDFView/Open
10_chapter5.pdf1.27 MBAdobe PDFView/Open
11_chapter6.pdf327.08 kBAdobe PDFView/Open
12_chapter7.pdf12.94 kBAdobe PDFView/Open
13_reference.pdf48.71 kBAdobe PDFView/Open
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