1. Shodhganga@INFLIBNET
  2. Indian Institute of Information Technology, Allahabad
  3. Electronics and Communication Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/378808
Title: Fabrication and characterization of metal ferroelectric high k silicon gate stack for non volatile memory applications
Researcher: Singh, Prashant
Guide(s): Singh, Rajat Kumar and Singh, B. R.
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Indian Institute of Information Technology, Allahabad
Completed Date: 2018
Abstract: newline
Pagination: xxi, 141p.
URI: http://hdl.handle.net/10603/378808
Appears in Departments:Electronics and Communication Engineering

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01_title.pdfAttached File208.16 kBAdobe PDFView/Open
02_declaration.pdf147.47 kBAdobe PDFView/Open
03_certificate.pdf144.44 kBAdobe PDFView/Open
04_acknowledgement.pdf80.62 kBAdobe PDFView/Open
05_content.pdf173.37 kBAdobe PDFView/Open
06_list of graph and table.pdf201.23 kBAdobe PDFView/Open
07_abstract.pdf165.08 kBAdobe PDFView/Open
08_chapter 1.pdf852.9 kBAdobe PDFView/Open
09_chapter 2.pdf1.02 MBAdobe PDFView/Open
10_chapter 3.pdf2.89 MBAdobe PDFView/Open
11_chapter 4.pdf114.19 MBAdobe PDFView/Open
12_chapter 5.pdf90.85 MBAdobe PDFView/Open
13_chapter 6.pdf147.14 MBAdobe PDFView/Open
14_bibliography.pdf177.26 kBAdobe PDFView/Open
80_recommendation.pdf168.38 kBAdobe PDFView/Open
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