Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/37827
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dc.coverage.spatialCertain investigations on low Transition test pattern generator Architecture for built in self test BISTen_US
dc.date.accessioned2015-03-23T08:13:50Z-
dc.date.available2015-03-23T08:13:50Z-
dc.date.issued2015-03-23-
dc.identifier.urihttp://hdl.handle.net/10603/37827-
dc.description.abstractWith the advancement in digital VLSI circuit design power newlinedissipation has become a critical concern in recent years driven by the newlineemergence of portable devices in mobile applications Power dissipation is newlineapplicable not only to design power but also for testing power It is because newlinethe large and complex chips require a huge amount of test data and dissipate a newlinesubstantial amount of power during test The reason is that the consecutive newlineinput test vectors are statistically independent which result in increased newlineswitching activity in the circuit during testing There are many test parameters newlinethat should be improved in order to reduce the test cost These parameters newlineinclude the test power test length test application time test fault coverage newlineand test hardware area overhead Hence the research concentrates to develop newlinetechniques which significantly improve the fault coverage with good newlinerandomness test vectors and high correlation between the test vectors newlineacceptable area overhead and minimum test power consumption newlineGLFSR Bipartite Technique BP design is a combination of newlineGLFSR and intermediate patterns insertion technique called Bipartite newlineTechnique BP newlineen_US
dc.format.extentxxiv, 157p.en_US
dc.languageEnglishen_US
dc.relationp145-156.en_US
dc.rightsuniversityen_US
dc.titleCertain investigations on low Transition test pattern generator Architecture for built in self test BISTen_US
dc.title.alternativeen_US
dc.creator.researcherSakthivel Pen_US
dc.subject.keywordBipartite Techniqueen_US
dc.subject.keywordBuilt in self testen_US
dc.description.noteappendix p139-144, reference p145-156.en_US
dc.contributor.guideNirmal kumar Aen_US
dc.publisher.placeChennaien_US
dc.publisher.universityAnna Universityen_US
dc.publisher.institutionFaculty of Electrical and Electronics Engineeringen_US
dc.date.registeredn.d.en_US
dc.date.completed01/10/2014en_US
dc.date.awarded30/10/2014en_US
dc.format.dimensions23cmen_US
dc.format.accompanyingmaterialNoneen_US
dc.source.universityUniversityen_US
dc.type.degreePh.D.en_US
Appears in Departments:Faculty of Electrical and Electronics Engineering

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01_title.pdfAttached File57.62 kBAdobe PDFView/Open
02_certificate.pdf605.75 kBAdobe PDFView/Open
03_abstract.pdf28.33 kBAdobe PDFView/Open
04_acknowledgement.pdf18.93 kBAdobe PDFView/Open
05_content.pdf60 kBAdobe PDFView/Open
06_chapter1.pdf373.23 kBAdobe PDFView/Open
07_chapter2.pdf1.99 MBAdobe PDFView/Open
08_chapter3.pdf1.54 MBAdobe PDFView/Open
09_chapter4.pdf1.15 MBAdobe PDFView/Open
10_chapter5.pdf1.81 MBAdobe PDFView/Open
11_chapter6.pdf979.08 kBAdobe PDFView/Open
12_chapter7.pdf27.42 kBAdobe PDFView/Open
13_appendix.pdf1 MBAdobe PDFView/Open
14_reference.pdf71.16 kBAdobe PDFView/Open
15_publication.pdf20.35 kBAdobe PDFView/Open


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