Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/377402
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dc.coverage.spatial
dc.date.accessioned2022-04-29T09:46:27Z-
dc.date.available2022-04-29T09:46:27Z-
dc.identifier.urihttp://hdl.handle.net/10603/377402-
dc.description.abstractAvailable
dc.format.extent165p.
dc.languageEnglish
dc.relationReferences given
dc.rightsuniversity
dc.titleThree port RF characterizations and noise modeling for separate gate double heterostructure inAlAs InGaAs InAlAs DG HEMT for millimeter wave and mixer applications
dc.title.alternative
dc.creator.researcherParveen
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.subject.keywordMillimeter wave, Port RF, Noise modeling
dc.description.note
dc.contributor.guideJogi, Jyotika
dc.publisher.placeNew Delhi
dc.publisher.universityUniversity of Delhi
dc.publisher.institutionDept. of Electronic Science
dc.date.registered
dc.date.completed2015
dc.date.awarded
dc.format.dimensions
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Dept. of Electronic Science

Files in This Item:
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01_title.pdfAttached File81.97 kBAdobe PDFView/Open
02_certificate.pdf321.63 kBAdobe PDFView/Open
03_acknowledgement.pdf107.47 kBAdobe PDFView/Open
04_abstract.pdf118.43 kBAdobe PDFView/Open
05_table of content.pdf107.08 kBAdobe PDFView/Open
06_chapter 1.pdf284.81 kBAdobe PDFView/Open
07_chapter 2.pdf455.74 kBAdobe PDFView/Open
08_chapter 3.pdf360.16 kBAdobe PDFView/Open
09_chapter 4.pdf469.3 kBAdobe PDFView/Open
10_chapter 5.pdf468.44 kBAdobe PDFView/Open
11_appendix.pdf96.43 kBAdobe PDFView/Open
12_list of publications.pdf2.23 MBAdobe PDFView/Open
80_recommendation.pdf156.49 kBAdobe PDFView/Open


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