Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/377402
Title: Three port RF characterizations and noise modeling for separate gate double heterostructure inAlAs InGaAs InAlAs DG HEMT for millimeter wave and mixer applications
Researcher: Parveen
Guide(s): Jogi, Jyotika
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
Millimeter wave, Port RF, Noise modeling
University: University of Delhi
Completed Date: 2015
Abstract: Available
Pagination: 165p.
URI: http://hdl.handle.net/10603/377402
Appears in Departments:Dept. of Electronic Science

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01_title.pdfAttached File81.97 kBAdobe PDFView/Open
02_certificate.pdf321.63 kBAdobe PDFView/Open
03_acknowledgement.pdf107.47 kBAdobe PDFView/Open
04_abstract.pdf118.43 kBAdobe PDFView/Open
05_table of content.pdf107.08 kBAdobe PDFView/Open
06_chapter 1.pdf284.81 kBAdobe PDFView/Open
07_chapter 2.pdf455.74 kBAdobe PDFView/Open
08_chapter 3.pdf360.16 kBAdobe PDFView/Open
09_chapter 4.pdf469.3 kBAdobe PDFView/Open
10_chapter 5.pdf468.44 kBAdobe PDFView/Open
11_appendix.pdf96.43 kBAdobe PDFView/Open
12_list of publications.pdf2.23 MBAdobe PDFView/Open
80_recommendation.pdf156.49 kBAdobe PDFView/Open
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