Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/373631
Title: Acceptance of an Active Nanoscale Silicon Detector for Neutron Spectroscopy
Researcher: Swapna Lilly Cyriac
Guide(s): B. Bindhu
Keywords: Physical Sciences
Physics
Physics Particles and Fields
University: Noorul Islam Centre for Higher Education
Completed Date: 2021
Abstract: Presently available neutron detectors provide limited energy resolution for spectroscopic applications, due to the limitations of available neutron-induced reactions. Among the currently available semiconductor detectors, nanostructured Silicon (Si) detectors are superior because of their higher geometrical efficiencies and higher energy resolutions that can be used for charged particle spectroscopy. newlineThe work carried out in this study presents a novel semiconductor nano perforated Si neutron detector, which allows a good filling ratio of a neutron converter layer inside the detector and is capable for generating energy dependent pulse shapes, which can be utilized for neutron spectroscopy. The research and developments described in the work includes simulation, design development, fabrication, characterization and finally the validation of the Boron-10 (10B) sensitized perforated Si detectors. Based on the objective of developing and validating the response of the proposed detector design for neutron spectroscopy, the present work is divided into five sections. newlineThe first section investigated the response of a planar Si 10B sensitized neutron detector using a Americium - Beryllium (241Am- 7Be) neutron source as initial proof of the concept for being used as a neutron detector. And the results confirm the feasibility of using Si based detector for neutron detection. newlineThe second section describes the fabrication method of the perforated Si substrates. Perforated Si nano structures with different morphologies have been fabricated using a single step electrochemical etching method by varying the fabrication parameters. It has been understood that the parameters such as etching time and solution composition have great influence on the morphological characteristics. newlineThe third section elaborately describes the development of the proposed detector design: its design optimization based on the Stopping and Range of Ions in Matter (SRIM) code and the Geant4 Monte-Carlo Simulation Code to account for the radiation induced
Pagination: 5940kb
URI: http://hdl.handle.net/10603/373631
Appears in Departments:Department of Physics

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chapter 1.pdf562.61 kBAdobe PDFView/Open
chapter 2.pdf640.53 kBAdobe PDFView/Open
chapter 3.pdf1.17 MBAdobe PDFView/Open
chapter 4.pdf2.3 MBAdobe PDFView/Open
chapter 5.pdf1.43 MBAdobe PDFView/Open
chapter 6.pdf78.46 kBAdobe PDFView/Open
list of publications based on thesis.pdf87.9 kBAdobe PDFView/Open
references.pdf140.48 kBAdobe PDFView/Open
table of contents.pdf196.04 kBAdobe PDFView/Open
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