NONLINEAR OPTICAL PROPERTIES IN AlxGa N GaN SINGLE QUANTUM WELL UNDER APPLIED ELECTRIC FIELD

Abstract

Recently, there has been much research done in the field of III-nitride semiconductors. newlineGroup III-nitride wurtzite structures such as AlGaN and InGaN quantum wells (QWs) in newlineparticular, because of their wide band gaps, enable them emit blue or violet light. Shortwavelength lasers allow a high quantity of information to be stored on a digital versatile disk newline(DVD). InGaN QW light-emitting diodes (LEDs) can be used to excite a mixture of phosphors, newlineproducing white light. The wide band gap energy range also makes these materials good newlinecandidates for absorber layer in solar cells since the absorption edge of these materials can be newlinevaried to optimize cell efficiency. newline newlineIn short, this thesis explores the calculation of the built-in field and consequently the energy newlineeigenvalues in InGaN/GaN single QW and AlGaN/GaN QW single QW. Finally, a comparison newlineof optical properties between InGaN/GaN single QW and AlGaN/GaN single QW. This article newlineis organized as follows. newline