1. Shodhganga@INFLIBNET
  2. University of Mysore
  3. Department of Studies in Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/369046
Title: Reliability study of silicon germanium heterojunction bipolar transistors for extreme environment electronic applications
Researcher: Hegde, Vinayakprasanna Narayan
Guide(s): Gnana Prakash, A. P.
Keywords: Physical Sciences
Physics
Physics Applied
University: University of Mysore
Completed Date: 2018
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/369046
Appears in Departments:Department of Studies in Physics

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01_title.pdfAttached File70.88 kBAdobe PDFView/Open
02_certificate.pdf91.63 kBAdobe PDFView/Open
03_acknowledgement.pdf74.91 kBAdobe PDFView/Open
04_content.pdf46.93 kBAdobe PDFView/Open
05_list of tables.pdf52.9 kBAdobe PDFView/Open
06_list of figures.pdf137.19 kBAdobe PDFView/Open
07_abstract.pdf39.97 kBAdobe PDFView/Open
08_preface.pdf83.77 kBAdobe PDFView/Open
09_chapter 1.pdf559.28 kBAdobe PDFView/Open
12_chapter 2.pdf1.63 MBAdobe PDFView/Open
13_chapter 3.pdf818.98 kBAdobe PDFView/Open
14_chapter 4.pdf1.4 MBAdobe PDFView/Open
15_chapter 5.pdf1.06 MBAdobe PDFView/Open
16_chapter 6.pdf439.3 kBAdobe PDFView/Open
17_chapter 7.pdf646.91 kBAdobe PDFView/Open
18_chapter 8.pdf2.63 MBAdobe PDFView/Open
19_chapter 9.pdf71.29 kBAdobe PDFView/Open
20_bibliography.pdf117.94 kBAdobe PDFView/Open
21_list of publications.pdf60.15 kBAdobe PDFView/Open
80_recommendation.pdf137.18 kBAdobe PDFView/Open
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