Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/364101
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dc.date.accessioned2022-02-21T06:55:21Z-
dc.date.available2022-02-21T06:55:21Z-
dc.identifier.urihttp://hdl.handle.net/10603/364101-
dc.description.abstractSuperlattice based heterojunction devices are becoming increasing popular newlinedue to its improved performance. There are many notable superlattice structure based newlinedevices such as photovoltaic device, transistors, lasers, LED s, photo detectors etc. newlineSuperlattice structure based devices made of dilute magnetic semiconductor (DMS) newlinetunnel junctions outperforms other superlattice structures made of non-magnetic newlinematerials. This is due to the improved electron transport with in the device structure newlinewith spin magnetic moments. One such approach is adopted in the present work to newlinecome up with a novel DMS based superlattice structure for photovoltaic and high newlineelectron mobility transistor (HEMT) devices. newlinePerformance of the HEMT devices can be further improved by proper design of newlinethe channel region of the device. To further improve the HEMT device performance, newlinethe channel was modelled with the CNT and DMS layers at both the ends of the newlinechannel. The superlattice structure made of the Si/DMS/CNT/DMS/Si has resulted in newlinea very high conductivity and electron density with almost ten folds higher than the DMS newlinebased superlattice structure. The improved conductivity of the proposed superlattice newlinedevice structure with CNT is due to the reduced scattering and possible 2 dimensional newlineelectron gas (2DEG). The 2 DEG structure is due to the band alignment of the newlinesuperlattice structure. newlineSuperlattice structure analysis based on the physical modelling was further newlinejustified with the electronic device modelling based on the drift diffusion calculations. newlineThe calculations performed with the electron density and the electrostatic potential has newlineconfirmed the performance improvement of the superlattice structure made of DMS newlineoptical spacer in the heterojunction photovoltaic device. The performance of the device newlinewas analysed by comparing the efficiency of the existing device structure and the newlinesuperlattice device structure.
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titlePerformance Improvement of Electron Devices Based on Magnetic Tunnel Junction Inserted Superlattice Structures
dc.title.alternative
dc.creator.researcherM Ravindran
dc.subject.keywordEngineering
dc.subject.keywordEngineering and Technology
dc.subject.keywordEngineering Electrical and Electronic
dc.description.note
dc.contributor.guideP Shankar
dc.publisher.placeChennai
dc.publisher.universitySaveetha University
dc.publisher.institutionDepartment of Engineering
dc.date.registered2015
dc.date.completed2020
dc.date.awarded2020
dc.format.dimensions
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Engineering

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01_title.pdfAttached File102.88 kBAdobe PDFView/Open
02_certificate.pdf94.85 kBAdobe PDFView/Open
03_abstract.pdf49 kBAdobe PDFView/Open
04_declaration.pdf94.54 kBAdobe PDFView/Open
05_acknowledgement.pdf7.08 kBAdobe PDFView/Open
06_contents.pdf48.64 kBAdobe PDFView/Open
07_list_of_tables.pdf39.42 kBAdobe PDFView/Open
08_list_of_figures.pdf149.09 kBAdobe PDFView/Open
09_abbreviations.pdf138.96 kBAdobe PDFView/Open
10_chapter1.pdf1.13 MBAdobe PDFView/Open
11_chapter2.pdf740.39 kBAdobe PDFView/Open
12_chapter3.pdf1.12 MBAdobe PDFView/Open
13_chapter4.pdf1.11 MBAdobe PDFView/Open
14_chapter5.pdf704.21 kBAdobe PDFView/Open
15_chapter6.pdf522.94 kBAdobe PDFView/Open
16_conclusion and summary.pdf106.51 kBAdobe PDFView/Open
17_bibliography.pdf387.83 kBAdobe PDFView/Open
80_recommendation.pdf106.51 kBAdobe PDFView/Open


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