Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/36153
Title: | Modeling simulation and characterization of noise in inalas ingaas tied geometry double gate high electron mobility transistor for millimeter wave applications |
Researcher: | Bhattacharya, Monika |
Guide(s): | Gupta, Mridula |
Keywords: | geometry double gate Modeling simulation wave applications |
Upload Date: | 24-Feb-2015 |
University: | University of Delhi |
Completed Date: | 2013 |
Abstract: | Available |
Pagination: | 341p. |
URI: | http://hdl.handle.net/10603/36153 |
Appears in Departments: | Dept. of Electronic Science |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
01_title.pdf | Attached File | 69.03 kB | Adobe PDF | View/Open |
02_dedication.pdf | 24.42 kB | Adobe PDF | View/Open | |
03_certificate.pdf | 44.51 kB | Adobe PDF | View/Open | |
04_acknowledgements.pdf | 44.35 kB | Adobe PDF | View/Open | |
05_contents.pdf | 81.74 kB | Adobe PDF | View/Open | |
06_abstract.pdf | 107.49 kB | Adobe PDF | View/Open | |
07_chapter 1.pdf | 585.9 kB | Adobe PDF | View/Open | |
08_chapter 2.pdf | 567.94 kB | Adobe PDF | View/Open | |
09_chapter 3.pdf | 577.34 kB | Adobe PDF | View/Open | |
10_chapter 4.pdf | 934.2 kB | Adobe PDF | View/Open | |
11_chapter 5.pdf | 398.66 kB | Adobe PDF | View/Open | |
12_chapter 6.pdf | 2.46 MB | Adobe PDF | View/Open |
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