Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/36153
Title: Modeling simulation and characterization of noise in inalas ingaas tied geometry double gate high electron mobility transistor for millimeter wave applications
Researcher: Bhattacharya, Monika
Guide(s): Gupta, Mridula
Keywords: geometry double gate
Modeling simulation
wave applications
Upload Date: 24-Feb-2015
University: University of Delhi
Completed Date: 2013
Abstract: Available
Pagination: 341p.
URI: http://hdl.handle.net/10603/36153
Appears in Departments:Dept. of Electronic Science

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01_title.pdfAttached File69.03 kBAdobe PDFView/Open
02_dedication.pdf24.42 kBAdobe PDFView/Open
03_certificate.pdf44.51 kBAdobe PDFView/Open
04_acknowledgements.pdf44.35 kBAdobe PDFView/Open
05_contents.pdf81.74 kBAdobe PDFView/Open
06_abstract.pdf107.49 kBAdobe PDFView/Open
07_chapter 1.pdf585.9 kBAdobe PDFView/Open
08_chapter 2.pdf567.94 kBAdobe PDFView/Open
09_chapter 3.pdf577.34 kBAdobe PDFView/Open
10_chapter 4.pdf934.2 kBAdobe PDFView/Open
11_chapter 5.pdf398.66 kBAdobe PDFView/Open
12_chapter 6.pdf2.46 MBAdobe PDFView/Open
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