1. Shodhganga@INFLIBNET
  2. University of Jammu
  3. Department of Physics & Electronics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/360740
Title: Fabrication and Characterization of Pt HfO2 SiON Si structure employing metal floating gate for non volatile memory applications
Researcher: Renu
Guide(s): Vaid, Rakesh
Keywords: Physical Sciences
Multidisciplinary
Multidisciplinary Sciences
University: University of Jammu
Completed Date: 2021
Abstract: Fabrication and Characterization of Pt/HfO2/SiON/Si structure employing metal floating gate for non volatile memory applications newline
Pagination: Total Pages 200
URI: http://hdl.handle.net/10603/360740
Appears in Departments:Department of Physics & Electronics

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01_title.pdfAttached File107.52 kBAdobe PDFView/Open
02_dedication.pdf38.9 kBAdobe PDFView/Open
03_certificate.pdf345.07 kBAdobe PDFView/Open
04_urkund report - first page.pdf43.64 kBAdobe PDFView/Open
05_acknowledgements.pdf6.66 kBAdobe PDFView/Open
06_contents.pdf43.04 kBAdobe PDFView/Open
07_list of symbols.pdf112.81 kBAdobe PDFView/Open
08_list of tables.pdf155.37 kBAdobe PDFView/Open
09_list of figures.pdf112.89 kBAdobe PDFView/Open
10_abstract.pdf181.16 kBAdobe PDFView/Open
11_chapter 1.pdf749.99 kBAdobe PDFView/Open
12_chapter 2.pdf473.5 kBAdobe PDFView/Open
13_chapter 3.pdf1.51 MBAdobe PDFView/Open
14_chapter 4.pdf1.21 MBAdobe PDFView/Open
15_chapter 5.pdf178.75 kBAdobe PDFView/Open
80_recommendation.pdf282.11 kBAdobe PDFView/Open
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