Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/346621
Title: Defect Induced Bipolar Resistive Switching in TiO2 Based Memory Devices
Researcher: Barman,Arabinda
Guide(s): Kanjilal, Aloke and Dhar, Shankar
Keywords: Physical Sciences
Physics
Physics Applied
University: Shiv Nadar University
Completed Date: 2017
URI: http://hdl.handle.net/10603/346621
Appears in Departments:Department of Physics

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chapter1.pdf1.54 MBAdobe PDFView/Open
chapter2.pdf2.2 MBAdobe PDFView/Open
chapter3.pdf4.78 MBAdobe PDFView/Open
chapter4.pdf1.97 MBAdobe PDFView/Open
chapter5.pdf3.6 MBAdobe PDFView/Open
chapter6.pdf167.07 kBAdobe PDFView/Open
preliminary pages.pdf1.2 MBAdobe PDFView/Open
title page.pdf91.96 kBAdobe PDFView/Open
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