Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/345458
Title: Design of a Narrow Band Gap Material Heterojunction Tunnel Field Effect Transistor with Improved Short Channel Parameters
Researcher: Irfan Ahmad Pindoo
Guide(s): Dr Sanjeet Kumar Sinha
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Lovely Professional University
Completed Date: 2021
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/345458
Appears in Departments:Faculty of Technology and Sciences

Files in This Item:
File Description SizeFormat 
1. title page.pdfAttached File241.95 kBAdobe PDFView/Open
2. declaration.pdf428.94 kBAdobe PDFView/Open
3. preliminary pages.pdf574.59 kBAdobe PDFView/Open
4.1 chapter 1.pdf658.38 kBAdobe PDFView/Open
4.2 chapter 2.pdf774.15 kBAdobe PDFView/Open
4.3 chapter 3.pdf672.01 kBAdobe PDFView/Open
4.4 chapter 4.pdf761.58 kBAdobe PDFView/Open
4.5 chapter 5.pdf1.65 MBAdobe PDFView/Open
4.6 chapter 6.pdf1.19 MBAdobe PDFView/Open
4.7 chapter 7.pdf1.65 MBAdobe PDFView/Open
4.8 chapter 8.pdf1.34 MBAdobe PDFView/Open
4.9 chapter 9.pdf513.99 kBAdobe PDFView/Open
5. bibliography.pdf376.5 kBAdobe PDFView/Open
6. appendix.pdf525.35 kBAdobe PDFView/Open
80_recommendation.pdf752.1 kBAdobe PDFView/Open
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