Analysis design and implementation of non linear controller for flyback converter

Abstract

High step-up dc-dc converters are widely used in many applications like green energy system, motor control and industrial battery-charging system, etc. To achieve high efficiency, different converter topologies, soft switching circuits, devices with wide band-gap materials and filtering components have been proposed by many researchers. All the above-mentioned design techniques have been proposed to reduce the converter losses. Among the step-up (boost) converters, isolated flyback converter is preferred due to its simple structure and less number of components. In this thesis different flyback converter topologies have been studied and experimented to choose efficient topology. Further, proficient power conversion is achieved by minimization of semiconductor device losses. Nowadays, semiconductor switches are fabricated using wide band-gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). They are suitable for high power and high-frequency applications. SiC-MOSFET acts as an appropriate switching device than Insulated Gate Bipolar Transistor (IGBT) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET). It requires lesser gate drive energy with minimum conduction and switching losses. It has better electrical characteristics. SiC-MOSFET based dc-dc converters have minimum power loss than silicon based and are used in high power applications. newline