Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers

Abstract

Gallium nitride GaN is one of the most promising materials newlineamong group III nitrides because its bandgap of 34 eV makes it the best newlinecandidate for devices operating in the blue or UV part of the electromagnetic newlinespectrum GaN is mainly used in light emitting diodes LEDs laser diodes newlineLDs ultraviolet detectors colour displays and microwave devices GaN is newlinethe favourable material system for hightemperature and highpower newlineelectronic devices newlineGaN nanostructures have attracted much attention because of their newlinepotential for the near visible and UV optoelectronic applications GaN newlinenanostructures are mostly grown by vapourliquidsolid method MBE and newlineHVPE methods The chemical vapour deposition CVD technique continues newlineto lead the field of crystalline thin film technology by exploring new physics newlinematerial science and fabrication of novel devices newline newline