Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/341135
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dc.date.accessioned2021-09-20T04:23:34Z-
dc.date.available2021-09-20T04:23:34Z-
dc.identifier.urihttp://hdl.handle.net/10603/341135-
dc.description.abstractFilms can be continuous until these holes are completely bridged by the secondary nuclei. It also occurs, however, that some empty space can still remain unbrigided. No gap in the aggregate mass should be found in an ideal continuous film. At a certain average film thickness, such a stage can be reached in the film. The minimum thickness of the film for the continuous stage also depends on the nature of the deposits, deposition modes, parameters of deposition, etc. Recrystallization and sometimes annealing processes are often involved in the growth of the film. The film would be in a metastable state if the deposits do not have ample time for recrystallization or annealing until the subsequent uni or multi-coalescence takes place. The subsequent layers formed above them will be in such a state as well. There was practical significance and theoretical interest in the electrical properties of thin film. For thin film electrical conductors, insulators and devices, the solid state revolution has created major new functions. What was once done with large discrete electrical components and the device is now performed more effectively and reliably with integrated circuit chips based on microscopic thin film. newlineZnS is already commonly used in our community, as stated previously, and it is still a key element in many industrial manufacturing processes. With advances in ZnS thin film growth technology, epitaxial layers, single crystals and nanoparticles; we are now moving into an age in which ZnS devices are becoming increasingly practical and exotic. As it has a combination of specific properties such as electrical, optical and antimicrobial properties, ZnS has proven to be a boon for materials science. ZnS is widely used in many areas due to its diverse properties. ZnS occurs in the form of powder and/or in the form of gray-white to yellow parts. ZnS is a semiconductor material that is non-toxic and is abundant in nature. The ZnS material exhibits brittleness and low stiffness, so it is possible to use composite ZnS with
dc.format.extent173
dc.languageEnglish
dc.relation119
dc.rightsuniversity
dc.titleCOMPARATIVE STUDY OF MG AND AL DOPED zns THIN FILM FOR OPTO ELECTRONIC STUDIES
dc.title.alternative
dc.creator.researcherSHUBHAM PARSHURAM VIDHATE
dc.subject.keywordPhysical Sciences
dc.subject.keywordPhysics
dc.subject.keywordPhysics Applied
dc.description.note
dc.contributor.guideRAHUL SOLANKI
dc.publisher.placeDhaid Gaon
dc.publisher.universityHimalayan Garhwal University
dc.publisher.institutionDEPARTMENT OF PHYSICS
dc.date.registered2017
dc.date.completed2021
dc.date.awarded2021
dc.format.dimensionsA4
dc.format.accompanyingmaterialNone
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:DEPARTMENT OF PHYSICS

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01_title page.pdfAttached File168.82 kBAdobe PDFView/Open
02_declaration.pdf83.35 kBAdobe PDFView/Open
03_certificate.pdf214.47 kBAdobe PDFView/Open
04_acknowledgement.pdf81.26 kBAdobe PDFView/Open
05_abstract.pdf88.39 kBAdobe PDFView/Open
06_abbreviation.pdf87.99 kBAdobe PDFView/Open
07_table of content.pdf203.74 kBAdobe PDFView/Open
08_list of figure.pdf291.1 kBAdobe PDFView/Open
09_list of table.pdf246.89 kBAdobe PDFView/Open
10_chapter 01.pdf874.2 kBAdobe PDFView/Open
11_chapter 02.pdf307.83 kBAdobe PDFView/Open
12_chapter 03.pdf139.58 kBAdobe PDFView/Open
13_chapter 04.pdf337.27 kBAdobe PDFView/Open
14_chapter 05.pdf3.59 MBAdobe PDFView/Open
15_chapter 06.pdf187.13 kBAdobe PDFView/Open
16_chapter 07 references.pdf325.39 kBAdobe PDFView/Open
80_recommendation.pdf284.6 kBAdobe PDFView/Open


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