Studies on some oxide based dilute magnetic semiconductors

Abstract

The recent trend in evolution of magnetic storage devices needs to be compact reliable and increased memory Hence conventional charge based electronics are to be replaced by spin based electronics Spintronics This new generation of electronics involves data operation with spin degree of freedom which is a quantum mechanical property of electron This work is in search of suitable materials with improved magnetic property to satisfy the need of spin related memory applications Enhanced magnetic properties of Dilute Magnetic Semiconductors DMS has been already proven to fulfill the need of spintronics materials while the current task is to study some of the oxide based dilute magnetic semiconducting materials with improved magnetic properties Due care has to be taken to enhance the magnetic properties without destroying the semiconducting properties Since research of the nanostructured oxide based dilute magnetic semiconductors are limited the following transition metal doped oxide semiconductors are chosen as the research materials They are Manganese doped copper oxide Manganese doped Cerium oxide Manganese doped telluric oxide and Molybdenum doped Titanium oxide These materials in pure form and doped form are synthesized by chemical routes The structural properties the band gap energies and the magnetic properties were analyzed Pure and Mn doped Copper oxide with average particle size of 52 nm was synthesized by chemical route The properties of Mn doped Copper oxide reveals that the bandgap get widened This property may enhance the semiconducting property which can be tuned for spintronics applications Mn doped Copper oxide exhibit room temperature ferromagnetism which is more essential for magnetic storage devices. newline