Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/320096
Title: Resistive RAM and Neuromorphic Systems Role of ions and interface states
Researcher: Preetam Hazra
Guide(s): Jinesh K B
Keywords: Physical Sciences
Physics
Physics Applied
neuromorphic system, flash technology, floppy, switching mechanism, data storage, RAM, MRAM, RRAM, PCRAM, PPF,TFT, STM
University: Indian Institute of Space Science and Technology
Completed Date: 2020
Abstract: newline
Pagination: xvi, 146p
URI: http://hdl.handle.net/10603/320096
Appears in Departments:Department of Physics

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01_title.pdfAttached File55.72 kBAdobe PDFView/Open
02_declaration.pdf52.75 kBAdobe PDFView/Open
03_certificate.pdf57.75 kBAdobe PDFView/Open
04_abstract.pdf40.22 kBAdobe PDFView/Open
05_acknowledgement.pdf39.58 kBAdobe PDFView/Open
06_abbreviations.pdf47.19 kBAdobe PDFView/Open
07_list_of_figures.pdf107.95 kBAdobe PDFView/Open
08_table of contents.pdf68.08 kBAdobe PDFView/Open
10_chapter2.pdf752.78 kBAdobe PDFView/Open
11_chapter3.pdf954.28 kBAdobe PDFView/Open
12_chapter4.pdf929.93 kBAdobe PDFView/Open
13_chapter5.pdf830.96 kBAdobe PDFView/Open
14_chapter6.pdf2.09 MBAdobe PDFView/Open
15_chapter7.pdf1.85 MBAdobe PDFView/Open
16_chapter8.pdf1.31 MBAdobe PDFView/Open
17_chapter9.pdf89.64 kBAdobe PDFView/Open
18_list of publications based on the thesis.pdf80.41 kBAdobe PDFView/Open
80_recommendation.pdf111.31 kBAdobe PDFView/Open
9_chapter1.pdf1.03 MBAdobe PDFView/Open
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