Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/311362
Title: Ultra wideband LC quadrature vco design using on chip inductor and 8 bit capacitor bank in 130 nm cmos technology to serve modern wireless systems
Researcher: Deepak Balodi
Guide(s): Arunima Verma,P. A. Govindacharyulu
Keywords: Engineering
Engineering and Technology
Engineering Electrical and Electronic
University: Dr. A.P.J. Abdul Kalam Technical University
Completed Date: 2020
Abstract: newlineNext generation wireless devices will be required to support a wide variety of commercial newlinestandards and operate over a wide range of frequency bands. Two examples that are already newlinereceiving a lot of attention are software-defined and cognitive radios. Therefore, components newlinethat are capable of operating over ultra-wide frequency ranges are required. Oscillators with newlinethe capability of quadrature signal generations, are also a major component in any newlinecommunication system. They are often needed in RF transceivers to support spectrally newlineefficient modulation techniques. Furthermore, modern telecommunication standards require newlinevery low phase noise oscillators and because of their outstanding noise performance, LCoscillators, are a popular choice. Hence, a lot of effort has been invested in studying and newlineimproving the figure of merit (FOM) of wide tuning range LC-Quadrature voltage-controlled newlineoscillators (QVCO). So far, this effort has been primarily focused on three areas, expanding newlinethe tuning range, improving phase noise performance, and reducing the power consumption. newlineAlthough many techniques have been proposed and used successfully in the literature, a lot newlineof them lack sufficient theoretical analysis. The presented work in this thesis has tried to newlinemitigate that scarcity. newlineFirst, a narrowband VCO with low phase noise architecture that employs on-chip newlineinductor with cross coupled CMOS pair, was proposed. Using tuned MOS varactor, in 130 newlinenm-RF CMOS process, a high gain sensitivity of 194 MHz/V was obtained. Thus, the entire newlinefrequency range of 2415-2500 MHz for Bluetooth applications, supporting multiple newlinestandards from 3G to 5G, was covered by voltage tuning of 0.7-1.0 V. To achieve the low newlinepower dissipation, low bias (1.2 V) cross-coupled differential structure was adopted, which newlinecompletely paid for the losses occurred in the LC resonator. The power dissipation comes newlineout to be 8.56 mW, which is a remarkably small value for such a high gain and low noise newlineVCO. For the VCO frequencies in the presented LO-plan, the t
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URI: http://hdl.handle.net/10603/311362
Appears in Departments:dean PG Studies and Research

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chapter_1.pdf937.38 kBAdobe PDFView/Open
chapter_2.pdf1.39 MBAdobe PDFView/Open
chapter_3.pdf1.74 MBAdobe PDFView/Open
chapter_4.pdf1.36 MBAdobe PDFView/Open
chapter_5.pdf237.19 kBAdobe PDFView/Open
chapter_6.pdf306.27 kBAdobe PDFView/Open
chapter_7.pdf264.52 kBAdobe PDFView/Open
chapter_8.pdf147.61 kBAdobe PDFView/Open
chapter_9.pdf81.41 kBAdobe PDFView/Open
prelimnary.pdf744.9 kBAdobe PDFView/Open
title.pdf34.11 kBAdobe PDFView/Open
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