Impact of advanced III V compound semiconductor based HEMT for high power and RF applications

Abstract

Communication and information systems are subjected to rapid and highly sophisticated changes At present semiconductor heterostructure devices namely High Electron Mobility Transistors HEMT play a vital role in communication with speed and high frequency devices They satisfy the major requirements such as low power consumption medium integration low cost and high speed operation capabilities in circuits In dealing with very high frequency range cut off frequencies fT up to 500 GHz have been reported on the device level High Electron Mobility Transistors HEMT are suitable for high efficiency power amplifiers at 900 MHz and for data rates higher than 100 Gbit s for long range communication thereby covering a broad range of applications For coping up with explosive development costs and the competition seen in today s semiconductor industry Technology Computer Aided Design TCAD methodologies are extensively available for the investigation and characterisation of III V compound semiconductors This work is focussed on the detailed comparison of device performance and current transport models which addresses the critical device modeling issues Optimization of geometry gate electrode engineering doping materials and material compositions in relation with high output power high breakdown voltage high speed low leakage low noise and low power consumption are targeted A detailed analysis of these challenging tasks has been investigated in this research work by using device simulation At the beginning the work has been focused towards the investigation on the performance of InGaAs InAs InGaAs Composite Channel DMDG HEMT Devices supporting high frequency applications newline