Investigations on structural morphological optical and xray sensing properties of chemically grown undoped and doped znxbi2 s3 nixbi2 xs3 inxbi2 xs3 and cuxinybi2 xys3 bismuth sulfide thinfilms

Abstract

Thin films have a dynamic influence on the internal physical properties of the materials and vary in a passionate way from the analogous behaviour of the bulk solid The reduction of the dimension of a material to an order of numerous atomic layers creates a transitional system between macro structures and molecular structures thus providing us with a mode of investigation of the thin film layer by various characterisation techniques Several chalcogenide semiconductors like sulfides selenides and tellurides oxides are investigated for the construction of specific application due to their unique optical and electrical properties Amongst metal sulfide chalcogenide semiconductors are imminent class because of its distinctive band gap used for optoelectronic device and sensor fabrication Formation of ternary and quaternary metal sulfide chalcogenide semiconductors by doping of proper band gap metals are also enhances the efficiency of energy conversion devices Synthesis technique and specific properties of thin film will decides the band gap energy consistency and thickness Formation of thin film semiconductor is based on various techniques such as chemical bath deposition CBD spray pyrolysis pulsed laser deposition electron beam evaporation chemical vapour deposition etc Among the various deposition methods chemical bath deposition has been given much attention because it is a simple promising reproducibility and economic technique for the deposition for metal sulfide chalcogenide semiconductors newline