Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/298302
Title: Development of doped ZnO thin films by successive ionic layer adsorption and reaction method for photocatalytic activities
Researcher: Janaki Ramya A
Guide(s): Joseph Prince J
Keywords: Physical Sciences
Chemistry
Chemistry Multidisciplinary
University: Anna University
Completed Date: 2019
Abstract: Nowadays residual dye pollutants are improperly disposed into the water The conventional methods like chemical precipitation coagulation and adsorption on activated carbon cannot completely remove organic dye pollutants but only transfer dyes from one phase to another causing secondary pollution and requiring further treatment Advanced oxidation processes AOPs a set of chemical treatment procedures designed to treat dyes in waste water is regarded as one of the most promising alternative methods for conventional waste water treatment methods to remove dyes from water and various industry effluents Particularly the application of metal oxide semiconductors in the advanced oxidation process has gained much attention in treating dye wastewater due to its good degradation efficiency and low toxicity and does not generate harmful secondary by product When the metal oxide semiconductor is irradiated with a suitable wavelength it generates electron hole pairs upon irradiation ZnO have strong reduction oxidation capacity non toxicity higher stability than metals and chemical inertness etc which made ZnO as effective photocatalyst in the photocatalytic process Zinc oxide has wide direct band gap of 337 eV ie in the near UV range The band gap energy and the recombination of photogenerated electrons and holes of ZnO can be modified by doping metals nonmetals or coupling semiconductors The photocatalytic property of ZnO can be enhanced by either modifying the surface morphology of ZnO thin films or by doping with the transition metals Preparation and characterization of ZnO and doped ZnO polycrystalline thin film via wet chemical techniques have attracted considerable attention due to their wide application prospects in various electronic and optoelectronic devices newline
Pagination: xvii,124p.
URI: http://hdl.handle.net/10603/298302
Appears in Departments:Faculty of Science and Humanities

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03_abstracts.pdf14.19 kBAdobe PDFView/Open
04_acknowledgements.pdf11.98 kBAdobe PDFView/Open
05_contents.pdf28.76 kBAdobe PDFView/Open
06_listoftables.pdf13.62 kBAdobe PDFView/Open
07_listoffigures.pdf170.47 kBAdobe PDFView/Open
08_listofabbreviations.pdf236.07 kBAdobe PDFView/Open
09_chapter1.pdf656.72 kBAdobe PDFView/Open
10_chapter2.pdf550.41 kBAdobe PDFView/Open
11_chapter3.pdf1.65 MBAdobe PDFView/Open
12_chapter4.pdf1.28 MBAdobe PDFView/Open
13_chapter5.pdf1.46 MBAdobe PDFView/Open
14_chapter6.pdf1.2 MBAdobe PDFView/Open
15_conclusion.pdf38.34 kBAdobe PDFView/Open
16_references.pdf327.81 kBAdobe PDFView/Open
17_listofpublications.pdf232.46 kBAdobe PDFView/Open
80_recommendation.pdf136.5 kBAdobe PDFView/Open
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