Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/297966
Title: A study of ionization rate and drift velocity of electron in silicon with variation of field and temperature
Researcher: Singh, Sumer
Guide(s): Sharma, Matridutt
Keywords: Ionization rate
Physical Sciences
Physics
Physics Applied
University: Maharaja Ganga Singh University
Completed Date: 2009-10
Abstract: newline Abstract not available newline
Pagination: 66p.
URI: http://hdl.handle.net/10603/297966
Appears in Departments:Department of Physics

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01_title.pdfAttached File239.52 kBAdobe PDFView/Open
02_certificate.pdf58.58 kBAdobe PDFView/Open
03_acknowledgement.pdf57.54 kBAdobe PDFView/Open
04_preface.pdf40.81 kBAdobe PDFView/Open
05_contents.pdf61.02 kBAdobe PDFView/Open
06_chapter 1.pdf279.81 kBAdobe PDFView/Open
07_chapter 2.pdf734.33 kBAdobe PDFView/Open
08_chapter 3.pdf308.69 kBAdobe PDFView/Open
09_chapter 4.pdf212.8 kBAdobe PDFView/Open
10_chapter 5.pdf292.85 kBAdobe PDFView/Open
11_chapter 6.pdf190.81 kBAdobe PDFView/Open
12_appendix.pdf301.13 kBAdobe PDFView/Open
13_references.pdf80.81 kBAdobe PDFView/Open
80_recommendation.pdf2.79 MBAdobe PDFView/Open
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