Investigations on GaN InN InGaN nanostructures and electrochemical applications

Abstract

newline III Nitride semiconducting materials such as Gallium Nitride GaN Indium Nitride InN and Indium Gallium Nitride InGaN have outstanding properties with wide band gap values ranging from 3 4 eV GaN to 0 7 eV InN These materials are important in the field of optoelectronic devices operating from red to ultraviolet wavelength of electromagnetic spectrum Application of sensor has been found to be important for day to day life including safety and monitoring In general sensors have been used extensively in medical field as well as in environment as lifesaving appliances Along with application in optoelectronics GaN materials are bio-compatible in nature and the property can be used for sensing application Gallium Nitride Indium nitride and its alloys were realized by hydrothermal method It is challenging to grow good crystalline quality InGaN material due to the possibility of metallic Indium formation during the growth of InGaN thin films Extensive literature survey on the growth conditions have been carried out and optimization were carried out to grow nanocrystals Structural and morphological properties of the as prepared nanocrystals have been analyzed using X ray diffraction Fast Fourier Transform FFT and Transmission Electron Microscope TEM techniques Temperature dependent structural formation of nitride nanostructures have been systematically investigated using X ray diffraction Raman spectra of the sample grown at optimized conditions exhibited different phonon modes corresponding to hexagonal structure The formation of indium nitride and indium gallium nitride nanocrystals have been observed under TEM investigations FFT analysis revealed that the synthesized III nitride nanocrystals are of good crystalline quality newline newline