Chemical vapour deposition of Copper on aluminium

Abstract

Among all the deposition techniques Chemical Vapour Deposition newline CVD has important advantages that it is a non line of sight process While newlinePhysical Vapour Deposition PVD delivers atoms or small groups of atoms newlineto the substrate surface CVD carries molecules These molecules can newlineadsorb desorb or diffuse on the evolving film many times before they newlinedecompose and further film growth Consequently more uniform films are newlineformed and conformal coverage is more likely with CVD newlineChemical Vapour Deposition of films and coatings involve the newlinechemical reactions of gaseous reactants on or near the vicinity of a heated newlinesubstrate surface This atomistic deposition method can provide highly pure newlinematerials with structural control at atomic or nanometer scale level newlineMoreover it can produce single layer multilayer composite nano structured newlineand functionally graded coating materials with well controlled dimension and newlineunique structure at low processing temperatures The main objective of the newline present study was to build an indigenous CVD system and to deposit and newline characterize copper on aluminium using newlinecopper acetylacetonate as the precursor and using argon and nitrogen as newlinecarrier gases separately The design of a CVD system involves newline knowledge on basic physical chemical and engineering sciences newline newline