1. Shodhganga@INFLIBNET
  2. SRM Institute of Science and Technology
  3. Department of Electronics and Communication Engineering
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/283274
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DC FieldValueLanguage
dc.coverage.spatial
dc.date.accessioned2020-03-20T11:48:32Z-
dc.date.available2020-03-20T11:48:32Z-
dc.identifier.urihttp://hdl.handle.net/10603/283274-
dc.description.abstractnewline
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleMathematical Modeling of 3d Fully Depleted Double Gate Silicon on Insulator Mosfets with the Influence of Back Gate Bias
dc.title.alternative
dc.creator.researcherNeha Goel
dc.description.note
dc.contributor.guide
dc.publisher.placeKattankulathur
dc.publisher.universitySRM University
dc.publisher.institutionDepartment of Electronics and Communication Engineering
dc.date.registered1-1-2018
dc.date.completed
dc.date.awarded
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Electronics and Communication Engineering

Files in This Item:
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certificate page.pdfAttached File224.24 kBAdobe PDFView/Open
chapter 1.pdf835.74 kBAdobe PDFView/Open
chapter 2.pdf556.77 kBAdobe PDFView/Open
chapter 3.pdf1.07 MBAdobe PDFView/Open
chapter 4.pdf484.85 kBAdobe PDFView/Open
chapter 5.pdf209.44 kBAdobe PDFView/Open
list of publications.pdf178.22 kBAdobe PDFView/Open
preliminary pages.pdf290.72 kBAdobe PDFView/Open
references.pdf335.79 kBAdobe PDFView/Open
title.pdf109.85 kBAdobe PDFView/Open
vitae.pdf103.13 kBAdobe PDFView/Open
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