Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/283274
Title: Mathematical Modeling of 3d Fully Depleted Double Gate Silicon on Insulator Mosfets with the Influence of Back Gate Bias
Researcher: Neha Goel
Guide(s): 
University: SRM University
Completed Date: 
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/283274
Appears in Departments:Department of Electronics and Communication Engineering

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chapter 2.pdf556.77 kBAdobe PDFView/Open
chapter 3.pdf1.07 MBAdobe PDFView/Open
chapter 4.pdf484.85 kBAdobe PDFView/Open
chapter 5.pdf209.44 kBAdobe PDFView/Open
list of publications.pdf178.22 kBAdobe PDFView/Open
preliminary pages.pdf290.72 kBAdobe PDFView/Open
references.pdf335.79 kBAdobe PDFView/Open
title.pdf109.85 kBAdobe PDFView/Open
vitae.pdf103.13 kBAdobe PDFView/Open
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