Please use this identifier to cite or link to this item:
http://hdl.handle.net/10603/283274
Title: | Mathematical Modeling of 3d Fully Depleted Double Gate Silicon on Insulator Mosfets with the Influence of Back Gate Bias |
Researcher: | Neha Goel |
Guide(s): | |
University: | SRM University |
Completed Date: | |
Abstract: | newline |
Pagination: | |
URI: | http://hdl.handle.net/10603/283274 |
Appears in Departments: | Department of Electronics and Communication Engineering |
Files in This Item:
File | Description | Size | Format | |
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certificate page.pdf | Attached File | 224.24 kB | Adobe PDF | View/Open |
chapter 1.pdf | 835.74 kB | Adobe PDF | View/Open | |
chapter 2.pdf | 556.77 kB | Adobe PDF | View/Open | |
chapter 3.pdf | 1.07 MB | Adobe PDF | View/Open | |
chapter 4.pdf | 484.85 kB | Adobe PDF | View/Open | |
chapter 5.pdf | 209.44 kB | Adobe PDF | View/Open | |
list of publications.pdf | 178.22 kB | Adobe PDF | View/Open | |
preliminary pages.pdf | 290.72 kB | Adobe PDF | View/Open | |
references.pdf | 335.79 kB | Adobe PDF | View/Open | |
title.pdf | 109.85 kB | Adobe PDF | View/Open | |
vitae.pdf | 103.13 kB | Adobe PDF | View/Open |
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