Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/281699
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DC FieldValueLanguage
dc.coverage.spatialPhysics
dc.date.accessioned2020-03-13T11:42:34Z-
dc.date.available2020-03-13T11:42:34Z-
dc.identifier.urihttp://hdl.handle.net/10603/281699-
dc.description.abstractThe advanced research on low dimensional semiconducting systems has allowed us to understand, design and fabricate the semiconducting material to construct devices at nanoscale. It is necessary to engrave the bulk semiconducting material into low dimensional systems such as quantum well, quantum wire and quantum dot with desired size and shape to develop the electrical and optical properties of the semiconductor. The low dimensional semiconductor systems of the group III V and II VI have been studied extensively for the purpose of their applications in the field of nanoscaled optoelectronic devices and solar cells. The properties of low dimensional semiconducting systems can be modified by varying the shape, well width or thickness and barrier height, since, these systems offer an extensive research for wide applications. The application of external perturbations like temperature, pressure, electric field and magnetic field to the low dimensional semiconducting system also leads to significant changes in their electrical, optical and magnetic properties. newline
dc.format.extentXxi, 214p.
dc.languageEnglish
dc.relation266 nos.
dc.rightsuniversity
dc.titleStudies on Excitons in Low Dimensional Nanostructures with Varied Profiles
dc.title.alternativenone
dc.creator.researcherAnitha A.
dc.subject.keywordPhysical Sciences,Physics,Physics Applied
dc.description.notena
dc.contributor.guideArulmozhi M.
dc.publisher.placeKodaikanal
dc.publisher.universityMother Teresa Womens University
dc.publisher.institutionDepartment of Physics
dc.date.registered09.07.2014
dc.date.completed2018
dc.date.awarded28.09.2019
dc.format.dimensionsA4
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

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01_title.pdf.pdfAttached File210.81 kBAdobe PDFView/Open
02_certificate.pdf832.19 kBAdobe PDFView/Open
03_abstract.pdf592.49 kBAdobe PDFView/Open
04_declaration.pdf681.42 kBAdobe PDFView/Open
05_plagiarism certificate.pdf461.37 kBAdobe PDFView/Open
06_acknowledgement.pdf562.47 kBAdobe PDFView/Open
07_contents.pdf478.5 kBAdobe PDFView/Open
08_list of tables.pdf396.99 kBAdobe PDFView/Open
09_list of figures.pdf439.68 kBAdobe PDFView/Open
10_abbreviations.pdf466.58 kBAdobe PDFView/Open
11_chapter 1.pdf2.76 MBAdobe PDFView/Open
12_chapter 2.pdf1.26 MBAdobe PDFView/Open
13_chapter 3.pdf1.13 MBAdobe PDFView/Open
14_chapter 4.pdf1.12 MBAdobe PDFView/Open
15_chapter 5.pdf1.21 MBAdobe PDFView/Open
16_summary.pdf665.98 kBAdobe PDFView/Open


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