Analytical modeling and simulation Of a fully depleted dual material Surrounding gate mosfets Considering short channel effects

Abstract

Silicon on insulator SOI technology has been the forerunner of newlinethe CMOS technology in the last decade offering superior CMOS devices newlinewith higher speed, higher density and excellent radiation hardness and newlinereduced second order effects for VLSI applications Many novel device newlinestructures have been reported in literature to address the challenge of shortchannel newlineeffects SCE and higher performance for deep submicron VLSI newlineintegration However most of the proposed structures offer less SCE newlinesuppression and improved circuit performance simultaneously Because of newlinetheir extremely small geometries the design fabrication and analysis of these newlinedevices involve a careful consideration and prediction of phenomenon newlinerequired for the proper understanding of device physics at the submicrometer newlineand nanoscales which in turn forms the basic motivation towards this newlineresearch work Short channel effects SCE such as Drain induced barrier newlinelowering DIBL charge sharing model and surface scattering and hot newlineelectron effects are the parameters to be considered in MOSFET device for newlinemodeling Dual Material Surrounding Gate DMSG structure offers an newlinealternative way of simultaneous SCE suppression and improved device newlineperformance by careful control of the material workfunction newline newline