Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/279822
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dc.coverage.spatialSilicon Nanotube Field Effect Transistors-
dc.date.accessioned2020-03-03T13:02:52Z-
dc.date.available2020-03-03T13:02:52Z-
dc.identifier.urihttp://hdl.handle.net/10603/279822-
dc.description.abstractMulti-gate structures are one of the potential solutions to mitigate the Short Channel Effects (SCEs) faced by the planar MOSFET devices. Among multi-gate structures, Silicon Nanotube Field Effect Transistor (SiNTFET) is the latest version which has two gates namely inner gate and outer gate. Since the inner and outer gates are controlling the tubular channel of SiNT-FET, the device has enhanced performance in terms of excellent newlineimmunity to SCEs. Many aspects of the tube structures like junctionless operation, independent gate operation, impact of process variations are yet to be studied. The following variations of the Silicon nanotubes are explored in newlinethis work. and#1048696; Junctionless SiNT-FET and#1048696; SiNT FET with independent gate operation and#1048696; Tunneling operation on junctionless SiNT FET newlineApart from these, the impact of various structural parameters of the newlineSiNT-FET is also investigated. Junctionlesss SiNT-FETs offer excellent newlineimmunity to SCEs among multi-gate structures. Tube wall thickness of SiNTFETs offers one more degree of freedom to get lower OFF current. newlineAsymmetric inner and outer gate structure of SiNT-FET provides the asymmetric characteristics in the independent gate operation. Vi Tube structures can be used as tunnelling devices with lower subthreshold newlineswing, and lower OFF current (both PIN and junctionless newlinestructures). Process variation study of the tube structure suggests that the outer diameter of the tube is the most sensitive parameter. newline newline-
dc.format.extentxxvi, 134p.-
dc.languageEnglish-
dc.relationp.127-133-
dc.rightsuniversity-
dc.titleInvestigation of different silicon nanotube field effect transistors-
dc.creator.researcherAmbika R-
dc.subject.keywordEngineering and Technology,Computer Science,Computer Science Information Systems-
dc.subject.keywordSilicon Nanotube-
dc.subject.keywordTransistors-
dc.contributor.guideSrinivasan R-
dc.publisher.placeChennai-
dc.publisher.universityAnna University-
dc.publisher.institutionFaculty of Information and Communication Engineering-
dc.date.registeredn.d.-
dc.date.completed2018-
dc.date.awarded30/09/2018-
dc.format.dimensions21 cm-
dc.format.accompanyingmaterialNone-
dc.source.universityUniversity-
dc.type.degreePh.D.-
Appears in Departments:Faculty of Information and Communication Engineering

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01_title.pdfAttached File33.18 kBAdobe PDFView/Open
02_certificates.pdf707.21 kBAdobe PDFView/Open
03_abstract.pdf13.18 kBAdobe PDFView/Open
04_acknowledgement.pdf4.31 kBAdobe PDFView/Open
05_contents.pdf40.31 kBAdobe PDFView/Open
06_chapter1.pdf1.24 MBAdobe PDFView/Open
07_chapter2.pdf400.76 kBAdobe PDFView/Open
08_chapter3.pdf653.99 kBAdobe PDFView/Open
09_chapter4.pdf501.87 kBAdobe PDFView/Open
10_chapter5.pdf822.97 kBAdobe PDFView/Open
11_chapter6.pdf1.44 MBAdobe PDFView/Open
12_conclusion.pdf510.63 kBAdobe PDFView/Open
13_references.pdf29.17 kBAdobe PDFView/Open
14_publications.pdf9.44 kBAdobe PDFView/Open


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