Investigation of different silicon nanotube field effect transistors

Abstract

Multi-gate structures are one of the potential solutions to mitigate the Short Channel Effects (SCEs) faced by the planar MOSFET devices. Among multi-gate structures, Silicon Nanotube Field Effect Transistor (SiNTFET) is the latest version which has two gates namely inner gate and outer gate. Since the inner and outer gates are controlling the tubular channel of SiNT-FET, the device has enhanced performance in terms of excellent newlineimmunity to SCEs. Many aspects of the tube structures like junctionless operation, independent gate operation, impact of process variations are yet to be studied. The following variations of the Silicon nanotubes are explored in newlinethis work. and#1048696; Junctionless SiNT-FET and#1048696; SiNT FET with independent gate operation and#1048696; Tunneling operation on junctionless SiNT FET newlineApart from these, the impact of various structural parameters of the newlineSiNT-FET is also investigated. Junctionlesss SiNT-FETs offer excellent newlineimmunity to SCEs among multi-gate structures. Tube wall thickness of SiNTFETs offers one more degree of freedom to get lower OFF current. newlineAsymmetric inner and outer gate structure of SiNT-FET provides the asymmetric characteristics in the independent gate operation. Vi Tube structures can be used as tunnelling devices with lower subthreshold newlineswing, and lower OFF current (both PIN and junctionless newlinestructures). Process variation study of the tube structure suggests that the outer diameter of the tube is the most sensitive parameter. newline newline