1. Shodhganga@INFLIBNET
  2. Sambalpur University
  3. Department of Physics
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/276750
Title: Studies on the effect of increase in band gap of base semiconductor on the millimeter wave properties of avalanche transit time diodes
Researcher: Pradhan, Janmejaya
Guide(s): Dash, GN
Keywords: Band-Gap
BaseSemiconductor
Millimeter-Wave
University: Sambalpur University
Completed Date: 2014
Abstract: Abstract not available
Pagination: xx, 209p.
URI: http://hdl.handle.net/10603/276750
Appears in Departments:Department of Physics

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01_title page.pdfAttached File34.04 kBAdobe PDFView/Open
02_declaration.pdf102.6 kBAdobe PDFView/Open
03_certificate.pdf52.96 kBAdobe PDFView/Open
04_acknowledgement.pdf81.76 kBAdobe PDFView/Open
05_contents.pdf501.12 kBAdobe PDFView/Open
06_chapter 1.pdf332.09 kBAdobe PDFView/Open
07_chapter 2.pdf1.55 MBAdobe PDFView/Open
08_chapter 3.pdf898.84 kBAdobe PDFView/Open
09_chapter 4.pdf879.14 kBAdobe PDFView/Open
10_chapter 5.pdf1.49 MBAdobe PDFView/Open
11_chapter 6.pdf1.3 MBAdobe PDFView/Open
12_chapter 7.pdf607.15 kBAdobe PDFView/Open
13_chapter 8.pdf462.69 kBAdobe PDFView/Open
14_chapter 9.pdf570.67 kBAdobe PDFView/Open
15_chapter 10.pdf268.64 kBAdobe PDFView/Open
16_appendix.pdf220.23 kBAdobe PDFView/Open
17_references.pdf833.06 kBAdobe PDFView/Open
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