1. Shodhganga@INFLIBNET
  2. Homi Bhabha National Institute
  3. Department of Physical Sciences
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/274447
Title: Growth of Si Ge Nanostructures on high Index silicon surfaces using molecular beam epitaxy and their characterization
Researcher: JATIS KUMAR DASH
Guide(s): P. V. Satyam
University: Homi Bhabha National Institute
Completed Date: 2012
Abstract: newline
Pagination: 
URI: http://hdl.handle.net/10603/274447
Appears in Departments:Department of Physical Sciences

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01_title.pdfAttached File48.62 kBAdobe PDFView/Open
02_certificate.pdf68.02 kBAdobe PDFView/Open
03_prelim_pages.pdf609.93 kBAdobe PDFView/Open
04-abstract.pdf1.16 MBAdobe PDFView/Open
05_contents.pdf189.47 kBAdobe PDFView/Open
06_tabfiglist.pdf732.21 kBAdobe PDFView/Open
07_chapter_1.pdf851.93 kBAdobe PDFView/Open
08_chapter_2.pdf6.46 MBAdobe PDFView/Open
09_chapter_3.pdf3.08 MBAdobe PDFView/Open
10_chapter-4.pdf2.94 MBAdobe PDFView/Open
11_chapter_5.pdf2.3 MBAdobe PDFView/Open
12_chapter_6.pdf1.46 MBAdobe PDFView/Open
13_chapter_7.pdf530.46 kBAdobe PDFView/Open
14-misc.pdf1.05 MBAdobe PDFView/Open
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