Growth of cesium iodide anthracene naphthalene KDP KAP and TGS crystals using direction controlled growth methods and their characterization

Abstract

The preparation of any single crystalline samples with sufficient size is an individual challenge and requires not only special knowledge of phase relations in the system a particular equipment for the preparation but also deep understanding of all the processes arising during the crystallization The technique used for crystal growth depends strongly on the conveniently attainable growth parameters of a particular method on thermal and mechanical properties of the material and on solid liquid vapor equilibrium data Crystal growth techniques have been classified into four groups by the nature of phase transition used during crystal growth growth from melt solution vapor and solid state The solution and vapor phase growth techniques are mostly used to avoid the decomposition of the material and to grow crystals at low temperatures Crystal growth from the melt is the most widely used method for preparation of large crystals and plays a very important role in developing optical electronic and magnetic devices Materials with controllable vapor pressure and congruent melting are most suitable for melt growth