Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/259035
Title: Topological modifications in nascent DC DC converters to accomplish fixed frequency resonant switching
Researcher: Shibu J V Bright
Guide(s): Ramkumar S
Keywords: Dc-Dc Converters
Engineering and Technology,Engineering,Engineering Electrical and Electronic
Resonant Switching
University: Anna University
Completed Date: 2018
Abstract: The DC-DC power conversion technology is a major subject arena in the ambit of power electronics, and it has been under accretion for seven decades. A raucous statistic staunchly reveals that there have been more than 500 types of dc-dc converters archived, hitherto. Each DC-DC converter topology has evolved for a specific function with the ability of swaying certain set of performance criterions, namely, higher voltage gain, improved efficiency, diminished switching losses etc. They are habitually named by either their functions or by the modus of operandi through which they attain the performance criterion. Fang Lin Luo and Hong Ye has methodically categorized the types of dc-dc converters into six generations based on their characteristics and development succession. The Pulse Width Modulation (PWM) DC-DC converters, resonant DC-DC converters and switchedcapacitor (also called charge-pump) voltage regulators are herded under the category of switching-mode voltage regulators. The involvement of DC-DC converters in such regulators has driven the research on DC-DC converter in unprecedented manner. Right from the basic electronic circuits (both digital and analog), the appliances like personal computers, telecommunication systems, aerospace technology, medical instrumentation, defense electronics, display devices etc. eventually necessitate power supplies involving DC-DC converters. In switching-mode converters, in spite of low conduction losses, the frequency dependent switching losses make the abated efficiency value. Conventional PWM DC-DC converters are hard switched, where rectangular (shaped) voltages and currents of semiconductor devices are changed abruptly from high values to zero and vice versa at subtle time interval (turn-on/turnoff times), causing higher switching losses and generating a substantial newlineamount of Electro Magnetic Interference (EMI) additionally. newline newline newline
Pagination: xxiv, 153p.
URI: http://hdl.handle.net/10603/259035
Appears in Departments:Faculty of Electrical Engineering

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01_title.pdfAttached File55.01 kBAdobe PDFView/Open
02_certificates.pdf99.55 kBAdobe PDFView/Open
03_abstract.pdf33.54 kBAdobe PDFView/Open
04_acknowledgement.pdf23.91 kBAdobe PDFView/Open
05_table of contents.pdf87.71 kBAdobe PDFView/Open
06_list_of_abbreviations.pdf22.65 kBAdobe PDFView/Open
07_chapter1.pdf1.03 MBAdobe PDFView/Open
08_chapter2.pdf108.33 kBAdobe PDFView/Open
09_chapter3.pdf1.03 MBAdobe PDFView/Open
10_chapter4.pdf1.42 MBAdobe PDFView/Open
11_chapter5.pdf2.18 MBAdobe PDFView/Open
12_chapter6.pdf2.92 MBAdobe PDFView/Open
13_conclusion.pdf42.12 kBAdobe PDFView/Open
14_references.pdf87.56 kBAdobe PDFView/Open
15_list_of_publications.pdf26.37 kBAdobe PDFView/Open
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