The Comparative Investigations Of Conventional And Unidirectional Method Grown Nonlinear Optical And Ferroelectric Single Crystals

Abstract

The present investigation deals with the growth of single crystals of newlinesodium sulfanilate dihydrate diglycine zinc chloride dihydrate diglycine newlinebarium chloride monohydrate potassium acid phthalate benzophenone and newlineferroelectric single crystals of glycine phosphite and triglycine sulphate The newlinecrystals were grown by conventional slow evaporation solution technique newlineSEST and SankaranarayananRamasamy SR method newlineSemiorganic nonlinear optical crystal sodium sulfanilate dihydrate newlineSSDH was grown by conventional and SR method Full width at half newlinemaximum FWHM of SR method grown SSDH crystal which is 17 arc sec newlineshows that the crystalline perfection is good Estimated etch pit density EPD newlinefor conventional and SR method grown SSDH crystal is 82×10 cm and newline37×10 cm respectively The maximum laser induced damage threshold of newlineSSDH crystal grown by the SEST and SR method is 12 and 17 mJ cm newlinerespectively The SR method grown SSDH crystal has higher optical newlinetransmittance birefringence values and mechanical strength compared to newlineconventional method grown crystals The reasons for higher crystalline newlineperfection in SR grown crystal are discussed elaborately newlineDiglycine zinc chloride dihydrate DGZCD a nonlinear optical crystal newlinewas grown by conventional and SR method By employing this unidirectional newlinemethod DGZCD single crystals of diameter 30 mm and length upto 60 mm newlinewere grown Less etch pit density and higher laser damage threshold in SR newlinegrown DGZCD shows that the quality of the crystal grown by SR method is newlinebetter than the conventional method grown crystal The HRXRD study shows newlinethat the crystalline perfection of the SR grown crystal is quite good without newlinehaving any internal structural low angle grain boundaries Higher mechanical newlinestability for SR method grown DGZCD crystal indicates greater stress newlinerequired to form dislocation thus confirming greater crystalline perfection newlineThe transmittance of SEST and SR grown DGZCD is 55 and 66 newlinerespectively The SR method grown crystal has higher dielectric permittivity and lower dielectric loss compared to convent