1. Shodhganga@INFLIBNET
  2. Mahatma Gandhi University
  3. St. Thomas College
Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/25769
Title: Atomistic simulation of nanoscale MOSFETs in the ballistic regime of operation
Researcher: James, T George
Guide(s): Mathew, Vincent
Keywords: Ballistic operation
Metal oxide semiconductor field effect transistors
MOSFET
Upload Date: 25-Sep-2014
University: Mahatma Gandhi University
Completed Date: 15/06/2011
Abstract: newline
Pagination: xix, 140p.
URI: http://hdl.handle.net/10603/25769
Appears in Departments:St. Thomas College

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01_title.pdfAttached File19.52 kBAdobe PDFView/Open
02_declaration.pdf24.82 kBAdobe PDFView/Open
03_certificate.pdf32.62 kBAdobe PDFView/Open
04_acknowledgement.pdf34.1 kBAdobe PDFView/Open
05_abstract.pdf30.96 kBAdobe PDFView/Open
06_preface.pdf53.94 kBAdobe PDFView/Open
07_list of publications.pdf53.16 kBAdobe PDFView/Open
08_contents.pdf44.62 kBAdobe PDFView/Open
09_list of figures.pdf56.31 kBAdobe PDFView/Open
10_list of tables.pdf46.96 kBAdobe PDFView/Open
11_chapter 1.pdf364.03 kBAdobe PDFView/Open
12_chapter 2.pdf176.24 kBAdobe PDFView/Open
13_chapter 3.pdf175.54 kBAdobe PDFView/Open
14_chapter 4.pdf279.69 kBAdobe PDFView/Open
15_chapter 5.pdf193.27 kBAdobe PDFView/Open
16_chapter 6.pdf132.71 kBAdobe PDFView/Open
17_chapter 7.pdf136.59 kBAdobe PDFView/Open
18_chapter 8.pdf62.04 kBAdobe PDFView/Open
19_bibliography.pdf99.66 kBAdobe PDFView/Open
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