Nanoscale double gate mosfets for subthreshold low power applications using high k dielectrics

Abstract

Recent oriented towards reducing the power and increasing the gain of single chip systems newlineWhile focusing the attention on low power and gain in the device the material used newlinehas to be taken into consideration newlineIn semiconductor industry emerging devices with low power and high gain newlineare mainly used in VLSI applications The primary driving factor being the increase newlinein scale of integration the chip has to accommodate smaller and faster transistors newlinethan their predecessors During the last decade conventional scaling in devices has newlinebeen a challenge for the semiconductor technology Scaling has been aimed to newlineachieve high speed low power and high density However as scaling approaches its newlinephysical limit it becomes more difficult in real time implementations Researches newlinecarried out to investigate an alternative have led to the introduction of new materials newlineand concepts to overcome the variations Highk dielectric materials are explored to newlinereduce Off current and parasitic capacitance in devices Among the different highk newlinematerials available the nano size Zirconium dioxide is suggested as the alternate newlinegate oxide material for devices due to its thermal stability and small grain boundary newlinesize based on the experiment carried out newline newline