Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/24464
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dc.coverage.spatialInformation and Communication Engineeringen_US
dc.date.accessioned2014-09-02T08:49:39Z-
dc.date.available2014-09-02T08:49:39Z-
dc.date.issued2014-09-02-
dc.identifier.urihttp://hdl.handle.net/10603/24464-
dc.description.abstractIn a Phase Locked Loop PLL the Charge Pump CP circuit is newlineone of the key elements It receives Up and Down signals from the newlinePhase Frequency Detector PFD and transforms it into current signals In newlineComplementary Metal Oxide Semiconductors CMOS CPs there are two newlineswitches made up of P channel Metal Oxide Semiconductors pMOS and newlineN channel Metal Oxide Semiconductors nMOS called as Up and Down newlineswitches respectively The Drain to source voltage of pMOS and nMOS is newlinevaried depending on the phase detector output voltage thereby causing the newlinemagnitude of the currents in the pMOS IUP and nMOS IDN to differ This newlinecurrent mismatch of the CP in the PLL produces some fluctuations in a newlinevoltage controlled oscillator VCO input and therefore there is a large phase newlinenoise on the PLL output signals The prime objective of this research work is newlineto design a Charge Pump Phase Locked Loop CPPLL that can operate up to newlinea frequency of 200 MHz using Gain Boosting Charge Pump architecture newlineIt combines an error amplifier and reference current sources to achieve good newlinecurrent matching characteristics and lower phase noise At the same time the newlinecharge removal transistors is used to eliminate the charge sharing problem newlineen_US
dc.format.extentxvii, 160p.en_US
dc.languageEnglishen_US
dc.relation-en_US
dc.rightsuniversityen_US
dc.titleDesign and analysis of high Performance charge pump phase lock Loop with low current mismatch and High output impedanceen_US
dc.title.alternative-en_US
dc.creator.researcherSujatha, Ven_US
dc.subject.keywordChannel Metal Oxide Semiconductorsen_US
dc.subject.keywordCharge Pump Phase Locked Loopen_US
dc.subject.keywordComplementary Metal Oxide Semiconductorsen_US
dc.subject.keywordGain Boosting Charge Pumpen_US
dc.subject.keywordHigh output impedanceen_US
dc.subject.keywordHigh Performance charge pump phaseen_US
dc.subject.keywordInformation and Communication engineeringen_US
dc.subject.keywordPhase Frequency Detectoren_US
dc.subject.keywordPhase Locked Loopen_US
dc.subject.keywordVoltage controlled oscillatoren_US
dc.description.noteAppendix p118-151, reference p152-158.en_US
dc.contributor.guideWahida Banu, R S Den_US
dc.publisher.placeChennaien_US
dc.publisher.universityAnna Universityen_US
dc.publisher.institutionFaculty of Information and Communication Engineeringen_US
dc.date.registeredn.d.en_US
dc.date.completed01-11-2013en_US
dc.date.awarded30-11-2013en_US
dc.format.dimensions23cmen_US
dc.format.accompanyingmaterialNoneen_US
dc.source.universityUniversityen_US
dc.type.degreePh.D.en_US
Appears in Departments:Faculty of Information and Communication Engineering

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01_title.pdfAttached File38.99 kBAdobe PDFView/Open
02_certificate.pdf886.35 kBAdobe PDFView/Open
03_abstract.pdf7.58 kBAdobe PDFView/Open
04_acknowledgement.pdf6.73 kBAdobe PDFView/Open
05_content.pdf28.01 kBAdobe PDFView/Open
06_chapter1.pdf681.66 kBAdobe PDFView/Open
07_chapter2.pdf556.05 kBAdobe PDFView/Open
08_chapter3.pdf640.83 kBAdobe PDFView/Open
09_chapter4.pdf484.66 kBAdobe PDFView/Open
10_chapter5.pdf732.68 kBAdobe PDFView/Open
11_chapter6.pdf11.03 kBAdobe PDFView/Open
12_appendix.pdf12.91 MBAdobe PDFView/Open
13_reference.pdf26.87 kBAdobe PDFView/Open
14_publication.pdf6.31 kBAdobe PDFView/Open
15_vitate.pdf5.18 kBAdobe PDFView/Open


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