Investigation of ft NQS delay intrinsic gain and noise figure in FinFETs junctionless FinFETs and cylindrical FETs

Abstract

The work carried out in this thesis can be split into three parts as follows The effect of the structural and doping parameter variations on unity gain cut off frequency ft non quasi static NQS delay intrinsic gain and noise figure NF in N type FinFETs also called as conventional double gate DG device inversion mode devices Junctionless FETs and gate allaround GAA transistors The effect of gate work function engineering on ft NQS delay intrinsic gain and NF in conventional and Junctionless devices The performance analysis of dual metal gate DMG in Junctionless FETs The entire work is simulation based and Sentaurus TCAD tool is used to perform the simulations and the devices are calibrated against the published DC parameters threshold voltage VT leakage current IOFF and drive current ION