Please use this identifier to cite or link to this item: http://hdl.handle.net/10603/234983
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dc.coverage.spatial
dc.date.accessioned2019-03-26T11:18:11Z-
dc.date.available2019-03-26T11:18:11Z-
dc.identifier.urihttp://hdl.handle.net/10603/234983-
dc.description.abstractnewline
dc.format.extent
dc.languageEnglish
dc.relation
dc.rightsuniversity
dc.titleStudies on Electrical Properties of GaN Based Metal Insulator Semiconductor MIS Structures
dc.title.alternative
dc.creator.researcherV.Manjunath
dc.description.note
dc.contributor.guideV.Rajagopal Reddy
dc.publisher.placeTirupati
dc.publisher.universitySri Venkateswara University
dc.publisher.institutionDepartment of Physics
dc.date.registered19-10-2017
dc.date.completed
dc.date.awarded
dc.format.dimensions
dc.format.accompanyingmaterialDVD
dc.source.universityUniversity
dc.type.degreePh.D.
Appears in Departments:Department of Physics

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01_title.pdfAttached File189.94 kBAdobe PDFView/Open
02_certificate.pdf95.21 kBAdobe PDFView/Open
03_declaration.pdf274.86 kBAdobe PDFView/Open
04_acknowledgement.pdf47.24 kBAdobe PDFView/Open
05_abstract.pdf231.38 kBAdobe PDFView/Open
06_contents.pdf435.68 kBAdobe PDFView/Open
07_chapter_01.pdf880.99 kBAdobe PDFView/Open
08_chapter_02.pdf866.94 kBAdobe PDFView/Open
09_chapter_03.pdf1.06 MBAdobe PDFView/Open
10_chapter_04.pdf985.53 kBAdobe PDFView/Open
11_chapter_05.pdf111 kBAdobe PDFView/Open


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